发明名称 |
Display device and method of driving thereof |
摘要 |
A display is disclosed. The display includes electrodes in an edge region of the panels to which AC voltages are applied to reduce the effects of ionic particles. |
申请公布号 |
US9142171(B2) |
申请公布日期 |
2015.09.22 |
申请号 |
US201113085364 |
申请日期 |
2011.04.12 |
申请人 |
Samsung Dsiplay Co., Ltd. |
发明人 |
Park Moon-Chul |
分类号 |
G09G5/00;G09G3/36 |
主分类号 |
G09G5/00 |
代理机构 |
Knobbe Martens Olson & Bear LLP |
代理人 |
Knobbe Martens Olson & Bear LLP |
主权项 |
1. A display device, comprising:
a liquid crystal panel assembly including a thin film transistor array panel having a pixel electrode and a common electrode panel having a common electrode applied with a common voltage and divided into a display area having pixels and an edge region enclosing the display area; an additional, distinct AC electrode formed in the edge region of the common electrode panel and applied with an AC voltage; an additional, distinct reference electrode formed in the edge region of the thin film transistor array panel opposite the AC electrode and applied with the common voltage; an AC voltage generator configured to generate the AC voltage and to transmit the AC voltage to the AC electrode; and a signal controller configured to transmit a control signal to the AC voltage generator, wherein the control signal is generated when a temperature of the edge region is higher than a threshold temperature, and wherein the AC voltage generator generates the AC voltage based on the control signal, wherein the AC voltage generator comprises: an AC voltage generating circuit configured to generate a +AVDD voltage and a −AVDD voltage; and a waveform formation circuit forming an AC waveform comprising the +AVDD voltage and the −AVDD voltage, wherein the waveform formation circuit comprises: a high voltage switching transistor configured to apply the +AVDD voltage to the AC electrode; a low voltage switching transistor configured to apply the −AVDD voltage to the AC electrode; and a driver transmitting a gate signal to the high voltage switching transistor and the low voltage switching transistor. |
地址 |
Gyeonggi-Do KR |