发明名称 Display device and method of driving thereof
摘要 A display is disclosed. The display includes electrodes in an edge region of the panels to which AC voltages are applied to reduce the effects of ionic particles.
申请公布号 US9142171(B2) 申请公布日期 2015.09.22
申请号 US201113085364 申请日期 2011.04.12
申请人 Samsung Dsiplay Co., Ltd. 发明人 Park Moon-Chul
分类号 G09G5/00;G09G3/36 主分类号 G09G5/00
代理机构 Knobbe Martens Olson & Bear LLP 代理人 Knobbe Martens Olson & Bear LLP
主权项 1. A display device, comprising: a liquid crystal panel assembly including a thin film transistor array panel having a pixel electrode and a common electrode panel having a common electrode applied with a common voltage and divided into a display area having pixels and an edge region enclosing the display area; an additional, distinct AC electrode formed in the edge region of the common electrode panel and applied with an AC voltage; an additional, distinct reference electrode formed in the edge region of the thin film transistor array panel opposite the AC electrode and applied with the common voltage; an AC voltage generator configured to generate the AC voltage and to transmit the AC voltage to the AC electrode; and a signal controller configured to transmit a control signal to the AC voltage generator, wherein the control signal is generated when a temperature of the edge region is higher than a threshold temperature, and wherein the AC voltage generator generates the AC voltage based on the control signal, wherein the AC voltage generator comprises: an AC voltage generating circuit configured to generate a +AVDD voltage and a −AVDD voltage; and a waveform formation circuit forming an AC waveform comprising the +AVDD voltage and the −AVDD voltage, wherein the waveform formation circuit comprises: a high voltage switching transistor configured to apply the +AVDD voltage to the AC electrode; a low voltage switching transistor configured to apply the −AVDD voltage to the AC electrode; and a driver transmitting a gate signal to the high voltage switching transistor and the low voltage switching transistor.
地址 Gyeonggi-Do KR