| 发明名称 | PhotoSensor and photodiode therefor | ||
| 摘要 | According to example embodiments, a photodiode includes a photoelectric layer on a first electrode, a second electrode on the photoelectric layer, and a first phosphorescence layer on the second electrode. | ||
| 申请公布号 | US9142790(B2) | 申请公布日期 | 2015.09.22 |
| 申请号 | US201213350226 | 申请日期 | 2012.01.13 |
| 申请人 | Samsung Electronics Co., Ltd.;Industry-Academic Cooperation Foundation, Yonsei University | 发明人 | Im Seong Il;Lee Kwang-Hyun |
| 分类号 | H01L35/24;H01L51/44;H01L51/42;H01L51/00;H01L27/28 | 主分类号 | H01L35/24 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A photodiode comprising: a first electrode; a photoelectric layer on the first electrode; a second electrode on the photoelectric layer; and a first phosphorescence layer on the second electrode. | ||
| 地址 | Gyeonggi-do KR | ||