发明名称 APPARATUS FOR TRANSISTOR OF USING METAL INSULATOR TRANSITION AND METHOD FOR MANUFACTURING THEREOF
摘要 <p>Disclosed are a transistor using metal insulator transition and a manufacturing method thereof. The transistor includes: a substrate on which different materials are stacked; a source and a drain which are formed on both sides of the substrate; and a gate which is formed on the upper side of the substrate and is made of piezoelectric materials.</p>
申请公布号 KR20150106476(A) 申请公布日期 2015.09.22
申请号 KR20140028229 申请日期 2014.03.11
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 SHIN, MIN CHEOL;LEE, JAE HYUN;JUNG, HYO EUN;LEE, ALEX TAEKYUNG;HAN, MYUNG JOON
分类号 H01L29/772;H01L21/31;H01L21/336;H01L41/297 主分类号 H01L29/772
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