发明名称 |
APPARATUS FOR TRANSISTOR OF USING METAL INSULATOR TRANSITION AND METHOD FOR MANUFACTURING THEREOF |
摘要 |
<p>Disclosed are a transistor using metal insulator transition and a manufacturing method thereof. The transistor includes: a substrate on which different materials are stacked; a source and a drain which are formed on both sides of the substrate; and a gate which is formed on the upper side of the substrate and is made of piezoelectric materials.</p> |
申请公布号 |
KR20150106476(A) |
申请公布日期 |
2015.09.22 |
申请号 |
KR20140028229 |
申请日期 |
2014.03.11 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
SHIN, MIN CHEOL;LEE, JAE HYUN;JUNG, HYO EUN;LEE, ALEX TAEKYUNG;HAN, MYUNG JOON |
分类号 |
H01L29/772;H01L21/31;H01L21/336;H01L41/297 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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