Array substrate

摘要

An array substrate includes a plurality of gate lines, first data line segments, second data line segments, first thin film transistors and second thin film transistors. Each first thin film transistor includes a first gate electrode, a first source electrode and a first drain electrode, and each second thin film transistor includes a second gate electrode, a second source electrode and a second drain electrode. The first data line segment, the second data line segment and the next first data line segment arranged sequentially in a first direction define a first gap and a second gap, where the second gap is greater than the first gap. The first source electrode, the second source electrode and the next first source electrode arranged sequentially in the first direction define a third gap and a fourth gap, where the third gap is greater than the first gap, and the fourth gap is smaller than the second gap.

主权项

1. An array substrate, comprising:
a substrate; a plurality of gate lines disposed on the substrate and substantially extended along a first direction; a plurality of first data lines and a plurality of second data lines disposed on the substrate and substantially extended along a second direction, wherein the first data lines and the second data lines are arranged sequentially and alternately in the first direction, each of the first data lines has a plurality of first data line segments respectively disposed between two adjacent ones of the gate lines, and each of the second data lines has a plurality of second data line segments respectively disposed between the two adjacent ones of the gate lines; a plurality of first thin film transistors, disposed on the substrate, wherein each of the first thin film transistors comprises:
a first gate electrode connected to the corresponding gate line;a first source electrode connected between the corresponding two adjacent first data line segments and at least partially overlapping the corresponding first gate electrode; anda first drain electrode; and a plurality of second thin film transistors disposed on the substrate, wherein each of the second thin film transistors comprises:
a second gate electrode connected to the corresponding gate line;a second source electrode connected between the corresponding two adjacent second data line segments and at least partially overlapping the corresponding second gate electrode; anda second drain electrode; wherein: the first data line segment, the second data line segment and the next first data line segment arranged sequentially in the first direction define a first gap and a second gap; the second gap is greater than the first gap; the first source electrode, the second source electrode and the next first source electrode arranged sequentially in the first direction are respectively corresponding to the first data line segment, the second data line segment and the next first data line segment to define a third gap and a fourth gap; the third gap is greater than the first gap; and the fourth gap is smaller than the second gap.