Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination

摘要

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves applying an adhesive layer to a front side of the semiconductor wafer. A mask layer is laminated onto the front side of the semiconductor wafer, the mask layer covering and protecting the integrated circuits. The adhesive layer adheres the mask layer to the front side of the semiconductor wafer. The mask layer is patterned with a laser scribing process to provide gaps in the mask layer, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the mask layer to singulate the integrated circuits.

主权项

1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
applying only an adhesive layer to a front side of the semiconductor wafer; subsequent to applying only the adhesive layer, laminating a mask layer onto the front side of the semiconductor wafer, the mask layer covering and protecting the integrated circuits, wherein the adhesive layer adheres the mask layer to the front side of the semiconductor wafer; patterning the mask layer with a laser scribing process to provide gaps in the mask layer, the gaps exposing regions of the semiconductor wafer between the integrated circuits; and plasma etching the semiconductor wafer through the gaps in the mask layer to singulate the integrated circuits, wherein the adhesive layer maintains contact between the semiconductor wafer and the mask layer during the laser scribing process and during the plasma etching.