Microwave plasma reactors

摘要

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

主权项

1. A microwave plasma assisted reactor comprising:
(a) a plasma chamber comprising an outer wall and defining (i) an interior cavity and (ii) an interior base cavity; (b) a conductive stage for supporting a substrate holder and having an upper surface extending into the plasma chamber interior base cavity, the conductive stage defining a microwave chamber in the plasma chamber interior base cavity between the plasma chamber outer wall and the conductive stage; and (c) a conducting short adjustably disposed in the microwave chamber below the upper surface by an axial distance L1, the conducting short being in electrical contact with the plasma chamber outer wall and the conductive stage, wherein L1 is capable of adjustment in the reactor by moving the conducting short.