| 发明名称 | Thin film forming method | ||
| 摘要 | A thin film forming method for forming a thin film on a workpiece accommodated within a reaction chamber includes a first operation of supplying a first source gas and a second source gas into the reaction chamber, and a second operation of stopping the supply of the first source gas, supplying the second source gas into the reaction chamber and setting an internal pressure of the reaction chamber higher than an internal pressure of the reaction chamber set in the first operation. The first operation and the second operation are alternately repeated a plurality of times. | ||
| 申请公布号 | US9139904(B2) | 申请公布日期 | 2015.09.22 |
| 申请号 | US201314107787 | 申请日期 | 2013.12.16 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Yamamoto Kazuya;Ito Yuichi |
| 分类号 | C23C16/455;C23C16/40;C23C16/52 | 主分类号 | C23C16/455 |
| 代理机构 | Nath, Goldberg & Meyer | 代理人 | Nath, Goldberg & Meyer ;Meyer Jerald L. |
| 主权项 | 1. A thin film forming method for forming a thin film on a workpiece accommodated within a reaction chamber, the method comprising: a first operation of supplying a first source gas and a second source gas into the reaction chamber; and a second operation of stopping the supply of the first source gas, supplying the second source gas into the reaction chamber and setting an internal pressure of the reaction chamber higher than an internal pressure of the reaction chamber set in the first operation, the first operation and the second operation being alternately repeated a plurality of times. | ||
| 地址 | Tokyo JP | ||