SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device is provided. The semiconductor device comprises a fin which is extended in a first direction on a substrate; a gate structure which intersect the fin, and is extended in a second direction different from the first direction; and a source/drain which is disposed on at least one side of the gate structure. The fin includes a first region disposed under the gate structure, and a second region disposed under the source/drain. The upper surface of the first region is curved, and the upper surface of the first region is lower than the lower surface of the source/drain.