PLASMA PROCESSING APPRATUS, SUBSTRATE PROCESSING SYSTEM, FABRICATION METHOD OF THIN FILM TRANSISTOR, AND STORAGE MEDIUM

摘要

Provided is a plasma processing apparatus capable of manufacturing a thin film transistor and suppressing the degradation of the feature of an oxide semiconductor. The plasma processing apparatus (2) processes a substrate F on which the thin film transistor (8) is formed with plasma. A processing container (31) to perform a plasma process includes a mounting stand (331) which mounts the substrate F to expose an oxide semiconductor layer (84) by etching a metal layer of an upper layer. A vacuum exhaust unit (314) exhausts the processing container (31) of a vacuum. A gas supply unit (360) supplies a mixed gas of an oxygen gas and a gas including fluorine or vapor which is a gas for generating the plasma. A plasma generating unit (34) performs the plasma process to expose the oxide semiconductor layer (54) to the plasma by changing the gas for generating the plasma into the plasma derived by the mixed gas of the oxygen gas and the gas including the fluorine or the vapor.