| 摘要 |
The present invention provides a semiconductor device which can perform the normally-off operation. The semiconductor device according to an embodiment of the present invention comprises: a first semiconductor layer formed from Al_XGa_1-XN; a second semiconductor layer installed on the first semiconductor layer formed from a non dope or n-type Al_YGa_1-YN; a first electrode installed on the second semiconductor layer; a second electrode installed on the second semiconductor layer; a third semiconductor layer installed between the first electrode and the second electrode on the second semiconductor layer, separated from the first electrode and the second electrode, and formed from p-type Al_ZGa_1-ZN (0<=Z<1); a control electrode installed on the third semiconductor layer; a fourth semiconductor layer installed between the first electrode and the control electrode on the third semiconductor layer, separated from the control electrode, and formed from n-type Al_UGa_1-UN; and a fifth semiconductor layer installed between the control electrode on the third semiconductor layer and the second electrode, separated from the control electrode, and formed from n-type Al_UGa_1-UN. |
