DOPED GRAPHENE PATTERN MANUFACTURING METHOD AND MANUFACTURING METHOD OF MANUFACTURING A P-N DIODE INCLUDING THEREOF

摘要

The present invention provides a method for manufacturing a doped graphene pattern, including the steps of: spraying carbon precursors including n-type carbon precursors on a substrate; forming an amorphous carbon pattern by irradiating the sprayed carbon precursors with an electron beam or an ion beam; and forming an n-type graphene pattern by treating the amorphous carbon pattern with heat. Therefore, damage to the substrate caused when a graphene pattern is formed is reduced, and the graphene pattern can be formed without deterioration of properties of graphene. Moreover, the graphene pattern and a p-n diode can be formed by a simple process without an additional photolithography process.