发明名称 |
STRUCTURE OF DIELECTRIC LAYER FOR MIS STRUCTURES HAVING CONDUCTIVITY SWITCHING EFFECT |
摘要 |
FIELD: electricity.SUBSTANCE: invention is related to the area of micro- and nanoelectronics, and namely to structure of dielectric layer for MIS structures having conductivity switching effect. Peculiarity of the suggested structure consists in formation of 1-5 layers of silicon-based material with thickness of 1-5nm inside the main dielectric film - large-gap semiconductor of oxide and/or silicone nitride or their alloys with carbon or germanium, with built-in nanosize silicon clusters; and the above material differs in chemical composition and less width of forbidden gap from material of the main layer.EFFECT: manufacturing silicon-based dielectric layers for MIS structures having conductivity switching effect, which allows manufacturing MIS structures off small area with increased yield of good structures.2 dwg |
申请公布号 |
RU2563553(C2) |
申请公布日期 |
2015.09.20 |
申请号 |
RU20130121234 |
申请日期 |
2013.05.07 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE UCHREZHDENIE NAUKI FIZIKO-TEKHNOLOGICHESKIJ INSTITUT ROSSIJSKOJ AKADEMII NAUK |
发明人 |
ORLIKOVSKIJ ALEKSANDR ALEKSANDROVICH;RUDYJ ALEKSANDR STEPANOVICH;BERDNIKOV ARKADIJ EVGEN'EVICH;POPOV ALEKSANDR AFANAS'EVICH;MIRONENKO ALEKSANDR ALEKSANDROVICH;GUSEV VALERIJ NIKOLAEVICH;CHERNOMORDIK VLADIMIR DMITRIEVICH |
分类号 |
H01L21/762;B82B1/00 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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