发明名称 DEVICE FOR GROWTH OF MONOCRYSTAL FROM MELT BY CHOKHRALSKY VERTICAL PULLING TECHNIQUE
摘要 FIELD: metallurgy.SUBSTANCE: claimed device comprises crucible 2 arranged in growing chamber 1 with adjacent heater 4 and heat insulator 5, seed holder 3 and thermal hollow above-crucible cylindrical shield 6. The latter is made of low-heat-conductivity material (quartz) fitted at crucible 2 from above to allow its lower part to be immersed in the melt. Said lower part has through cutouts. Note here that each of lower edges of said cutouts represents a line shaped to Archimedean arc or logarithmic spiral.EFFECT: lower and more stable temperature gradient over crystallisation front and inside single crystal, higher quality of grown crystal.2 cl, 2 dwg
申请公布号 RU2563485(C1) 申请公布日期 2015.09.20
申请号 RU20140148038 申请日期 2014.11.27
申请人 AKTSIONERNOE OBSHCHESTVO "GERMANIJ" (AO "GERMANIJ") 发明人 PODKOPAEV OLEG IVANOVICH;VAGANOV VLADIMIR JUR'EVICH;GERASIMOVICH VIKTOR IVANOVICH
分类号 C30B15/00;C30B15/14;C30B29/08 主分类号 C30B15/00
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