| 摘要 |
FIELD: electricity.SUBSTANCE: in high-power SHF FET at semiconductor heterostructure the semiconductor heterostructure is made as sequence of the following basic layers: at least one buffer layer of GaAs with thickness of at least of 200 nm, a group of conducting layers, which form FET channel, represented by channel layer of InGaAs with thickness of 12-18 nm and at least two ?n-layers doped with donor dopant, and two spacer i-layers of AlGaAs with thickness of 1-3 nm each placed in pairs at both sides of the channel layer, two groups of barrier layers of AlGaAs, each is made as i-p-i system of barrier layers, one of them is placed at one side of the group of conducting layers while the other gating group is placed at the opposite side, at that barrier layers in each i-p-i system have thickness of (100-200, 4-15, 2-10) nm in the substrate group and (2-10, 4-10, 4-15) nm in the gating group respectively, level of doping with acceptor dopant is (4-20)×10cmrespectively, barrier layer of i-GaAs with thickness of 5-30 nm, layer of ohmic contact of n-GaAs with thickness of (10-60) nm of source and drain electrodes, at that gate gating electrode has length less than 0.5 mcm.EFFECT: increased output power and amplification coefficient.3 cl, 2 dwg, 1 tbl |
