发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE |
摘要 |
A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with a second dopant type using a single implantation mask and a substantially similar implantation dose to form a second region and a junction termination extension (JTE) in the semiconductor layer, wherein the implantation dose is in a range from about 2 x 10 cm' to about 12 x 10 cm' . Semiconductor devices are also presented. |
申请公布号 |
IN3234CH2014(A) |
申请公布日期 |
2015.09.18 |
申请号 |
IN2014CHE3234 |
申请日期 |
2014.07.01 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
KENNERLY, STACEY JOY;BOLOTNIKOV, ALEXANDER VIKTOROVICH;LOSEE, PETER ALMERN |
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