发明名称 |
IMAGING DEVICE |
摘要 |
An imaging device which is capable of taking images with high quality and can be manufactured at low cost is provided. A first circuit includes a first transistor and a second transistor and a second circuit includes a third transistor and a photodiode. The first transistor and the third transistor are each an n-channel transistor including an oxide semiconductor layer as an active layer, and the second transistor is a p-channel transistor including an active region in a silicon substrate. The photodiode is provided in the silicon substrate. A region in which the first transistor and the second transistor overlap each other with an insulating layer positioned therebetween is provided. A region in which the third transistor and the photodiode overlap each other with the insulating layer positioned therebetween is provided. |
申请公布号 |
WO2015136418(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
WO2015IB51635 |
申请日期 |
2015.03.06 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;SAKAKURA, MASAYUKI;KUROKAWA, YOSHIYUKI |
分类号 |
H01L27/146;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/04;H01L29/786;H01L31/10;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|