发明名称 |
SEMICONDUCTOR DEVICE HAVING BURIED GATE, METHOD OF FABRICATING THE SAME, AND MODULE AND SYSTEM HAVING THE SAME |
摘要 |
A semiconductor device includes junction regions formed in upper portions of both sidewalls of a trench formed in a semiconductor substrate, a first gate electrode buried in the trench and having a stepped upper surface, and a second gate electrode formed on the first gate electrode to overlap a junction region. |
申请公布号 |
US2015263009(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201514712860 |
申请日期 |
2015.05.14 |
申请人 |
SK hynix Inc. |
发明人 |
OH Tae Kyung;YOO Min Soo |
分类号 |
H01L27/108;H01L21/28;H01L21/3213;H01L21/265;H01L29/423;H01L21/306 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Icheon KR |