| 摘要 |
The present invention discloses an electrostatic discharge protection circuit, comprising a diode and a N-type metal-oxide-semiconductor (NMOS) transistor. The diode locating on a N-well comprises an high P-doping concentration region and an nonadjacent high N-doping concentration region. The NMOS transistor, locating on a P-well, comprises a drain, a source and a gate, and the drain and the source are formed by the high N-doping concentration region. Wherein the P-well further comprises a high P-doping concentration region near the source, the drain of the NMOS is electrically connected to the high N-doping concentration region of the diode, the source of the NMOS and the adjacent high P-doping concentration region are electrically connected to a ground, the gate of the NMOS transistor electrically connected to a trigger point. Accordingly, the electrostatic discharge protection circuit has a low parasitic capacitance, wide operating voltage range and high electrostatic discharge (ESD) capability for resolving the problems about the ESD of the RX pins. |
| 主权项 |
1. An electrostatic discharge protection circuit, formed by a diode and a metal-oxide-semiconductor (MOS) transistor set on a semiconducting substrate, comprising:
a first well, having a first conducting mode; a second well, locating adjacent to the first well and having a second conducting mode; a first high doping concentration region, locating in the first well and having a second conducting mode, the first high doping concentration region electrically connected to a connected pad; a second high doping concentration region, locating in the first well and having a first predetermined distance from the first high doping concentration region, having a first conducting mode; a third high doping concentration region, locating in the first well and having a first conducting mode; a fourth high doping concentration region, locating in the second well and having a second predetermined distance from the third high doping concentration region, having a first conducting mode, the fourth high doping concentration region electrically connected to a ground pad; a fifth high doping concentration region, locating in the second well and locating adjacent to the fourth high doping concentration region, having a second conducting mode, the fifth high doping concentration region electrically the ground pad; and an electrode, locating on a surface of the second well between the third high doping concentration region and the fourth high doping concentration region, the electrode electrically connected to a trigger point; wherein the second high doping concentration region is electrically connected to the third high doping concentration region. |
