SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a semiconductor device includes: a semiconductor substrate, the semiconductor substrate having first and second surfaces; conductive regions extending in a direction from the first surface side toward the second surface side of the semiconductor substrate, the conductive regions including first and second vias; a first semiconductor region surrounding a part of each of the conductive regions on the second surface side of the semiconductor substrate, a portion other than a front surface of the first semiconductor region being surrounded by the semiconductor substrate; a first electrode provided on the second surface side; second electrodes provided on the first surface side, one of the second electrodes being in contact with one of the conductive regions; and an insulating film provided between each of the conductive regions and the semiconductor substrate, and between each of the conductive regions and the first semiconductor region.

主权项

1. A semiconductor device comprising:
a semiconductor substrate of a first conductivity type, the semiconductor substrate having a first surface and a second surface on an opposite side to the first surface; a plurality of conductive regions extending in a direction from a side of the first surface toward a side of the second surface of the semiconductor substrate, the conductive regions including a first via and a second via; a first semiconductor region of a second conductivity type surrounding a part of each of the conductive regions on the side of the second surface of the semiconductor substrate, a portion other than a front surface of the first semiconductor region being surrounded by the semiconductor substrate; a first electrode provided on the side of the second surface of the semiconductor substrate; a plurality of second electrodes provided on the side of the first surface of the semiconductor substrate, one of the second electrodes being in contact with one of the conductive regions; and an insulating film provided between each of the conductive regions and the semiconductor substrate, and provided between each of the conductive regions and the first semiconductor region, the first via piercing the semiconductor substrate and the first semiconductor region, the first via being in contact with the first electrode, the second via stopping partway through the first semiconductor region.