发明名称 |
Semiconductor Device and Method |
摘要 |
A method of forming a semiconductor device is provided. Metallic interconnects are formed in a dielectric layer of the semiconductor device. A hard mask is used to avoid usual problems faced by manufacturers, such as possibility of bridging different conductive elements and via patterning problems when there are overlays between vias and trenches. The hard mask is etched multiple times to extend via landing windows, while keeping distance between the conductive elements to avoid the bridging problem. |
申请公布号 |
US2015262873(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201414209836 |
申请日期 |
2014.03.13 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chu Ming-Hui;Ting Chih-Yuan;Shieh Jyu-Horng |
分类号 |
H01L21/768;H01L23/528;H01L21/311;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
|
主权项 |
|
地址 |
Hsin-Chu TW |