SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor device includes a first semiconductor layer, a first electrode provided on the first semiconductor layer, and a second electrode provided on the first semiconductor layer. The second electrode is apart from the first electrode in a second direction crossing a first direction from the first semiconductor layer toward the first electrode. The first electrode includes a first electrode layer and a second electrode layer. The first electrode layer includes a first metal. The second electrode layer is provided between the first electrode layer and the first semiconductor layer, and includes a second metal. The second metal has a melting point lower than a melting point of the first metal. A distance along the second direction between the first electrode layer and the second electrode is shorter than a distance along the second direction between the second electrode layer and the second electrode.

主权项

1. A semiconductor device comprising:
a first semiconductor layer; a first electrode provided on the first semiconductor layer; and a second electrode provided on the first semiconductor layer, the second electrode being apart from the first electrode in a second direction, the second direction crossing a first direction from the first semiconductor layer toward the first electrode, the first electrode including
a first electrode layer including a first metal, anda second electrode layer provided between the first electrode layer and the first semiconductor layer, the second electrode layer including a second metal, the second metal having a melting point lower than a melting point of the first metal, a first distance along the second direction between the first electrode layer and the second electrode being shorter than a distance along the second direction between the second electrode layer and the second electrode.