| 发明名称 |
APPARATUS AND METHODS FOR MANUFACTURING INGOT |
| 摘要 |
There is disclosed an ingot manufacture method to grow a first ingot from molten silicon in a crucible, the ingot manufacture method including growing at least a portion of the first ingot in a state where the height of the molten silicon which the crucible is filled with, is kept at a first level for a first period, and changing the height of the molten silicon into a second level different from the first level from the first level for a second period after the first period. |
| 申请公布号 |
US2015259824(A1) |
申请公布日期 |
2015.09.17 |
| 申请号 |
US201414257177 |
申请日期 |
2014.04.21 |
| 申请人 |
Kwon Hyun Goo;Yoon Yeo Kyun;Son Min Soo |
发明人 |
Kwon Hyun Goo;Yoon Yeo Kyun;Son Min Soo |
| 分类号 |
C30B15/00;C30B30/04 |
主分类号 |
C30B15/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An ingot manufacture method to grow a first ingot from molten silicon in a crucible, the ingot manufacture method comprising:
growing at least a portion of the first ingot in a state where the height of the molten silicon which the crucible is filled with is kept at a first level for a first period; and changing the height of the molten silicon into a second level different from the first level from the first level for a second period after the first period. |
| 地址 |
Uiwang KR |
