| 摘要 |
Provided is a method for producing a semiconductor device which includes: a step for preparing a semiconductor unit on which a semiconductor chip is mounted, and having a first principal surface provided with a heat-dissipating section and a second principal surface facing the first principal surface; a step for preparing a cooling device having a flat surface; a step for coating the first principal surface of the semiconductor unit or the flat surface of the cooling device with a paste containing metal nanoparticles; a step for contacting the first principal surface of the semiconductor unit and the flat surface of the cooling device to one another with the paste interposed therebetween; and a step for applying uniform in-plane pressure to the second principal surface of the semiconductor unit while simultaneously increasing the temperature of the paste, and forming a joining layer by sintering the paste. |
