RESISTIVE NONVOLATILE STORAGE DEVICE, MANUFACTURING METHOD FOR SAME, AND RESISTIVE NONVOLATILE STORAGE APPARATUS

摘要

A resistive nonvolatile storage device includes a first interlayer insulating layer provided above a substrate, a contact hole penetrating through the first interlayer insulating layer, a contact layer wholly covering a bottom surface and a sidewall surface of the contact hole and extending to at least partially cover an upper surface of the first interlayer insulating layer, a contact plug filled in the contact hole, an upper surface of the contact plug being positioned below an upper surface of the contact layer, a lower electrode provided on both the contact plug and the contact layer that is provided on the part of the upper surface of the first interlayer insulating layer, and a resistance change layer provided on the lower electrode, and an upper electrode that is provided on the resistance change layer.

主权项

1. A resistive nonvolatile storage device comprising:
a first interlayer insulating layer provided above a substrate; a contact hole penetrating through the first interlayer insulating layer; a contact layer wholly covering a bottom surface and a sidewall surface of the contact hole and extending to at least partially cover an upper surface of the first interlayer insulating layer; a contact plug filled in the contact hole, an upper surface of the contact plug being positioned below an upper surface of the contact layer that is provided along the upper surface of the first interlayer insulating layer; a lower electrode provided on both the contact plug and the contact layer that is provided along the upper surface of the first interlayer insulating layer; and a resistance change layer provided on the lower electrode, resistance of the resistance change layer changing in accordance with a voltage applied between the lower electrode and an upper electrode that is provided on the resistance change layer.