SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE

摘要

The driver semiconductor package includes a base substrate. The semiconductor package includes a semiconductor chip mounted on the base substrate. The semiconductor chip includes a core region disposed in a center part of the semiconductor chip, an internal circuit being provided in the core region. The semiconductor chip includes a plurality of IO cell regions disposed in a line along a side of the semiconductor chip, a differential circuit being provided in each of the plurality of IO cell regions. The semiconductor chip includes a non-inverting pad electrode disposed above each of the IO cell regions and electrically connected to a non-inverting terminal of the differential circuit. The semiconductor chip includes an inverting pad electrode disposed above each of the IO cell regions and connected to an inverting terminal of the differential circuit.

主权项

1. A semiconductor package, comprising:
a base substrate; and a semiconductor chip mounted on the base substrate, wherein the semiconductor chip comprises: a plurality of IO cell regions disposed in a line along a side of the semiconductor chip, a differential circuit being provided in each of the plurality of IO cell regions; a non-inverting pad electrode disposed above each of the IO cell regions and electrically connected to a non-inverting terminal of the differential circuit; and an inverting pad electrode disposed above each of the IO cell regions and connected to an inverting terminal of the differential circuit, and wherein a first set of a first non-inverting pad electrode and a first inverting pad electrode is disposed above a first IO cell region of the plurality of IO cell regions, and the first set is disposed so that the first non-inverting pad electrode and the first inverting pad electrode are disposed along a first line along the side of the semiconductor chip; and wherein a second set of a second non-inverting pad electrode and a second inverting pad electrode is disposed above a second IO cell region of the plurality of IO cell regions, and the second set is disposed so that the second non-inverting pad electrode and the second inverting pad electrode are disposed along a second line along the side of the semiconductor chip.