SEMICONDUCTOR DEVICE AND WIRE BONDING INTERCONNECTION METHOD

摘要

A first bond portion is formed on a first electrode, and for a wire extended from the first bond portion, a tip of a capillary is pressed against a bump formed on a second electrode, to form a second bond portion to which a shape of a pressing surface at the tip of the capillary is transferred. A base end of the second bond portion from which the wire starts becoming thinner is located on the inside of the bump from an end of a bonding surface by 10% or more of the length of the bonding surface, and the wire is cut with the capillary.

主权项

1. A semiconductor device comprising at least one wire that conductively connects a first electrode and a second electrode on which a bump is formed, wherein
the wire is formed of an alloy having silver as a main material, and has a first bond portion formed at a junction with the first electrode and a second bond portion formed at a junction with the bump on the second electrode, the second bond portion has a tapered shape, and a base end of the second bond portion from which the wire starts becoming thinner is located on a bonding surface between the wire and the bump as viewed from top, and the length of the wire from an end of the bonding surface on the side closer to the first bond portion to the base end is 10% or more of the length of the bonding surface in a direction in which the wire extends.