METHOD AND SYSTEM FOR FORMING PATTERNS WITH CHARGED PARTICLE BEAM LITHOGRAPHY

摘要

In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). In some embodiments, the sensitivity to changes in βf is reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in βf is reduced.

主权项

1. A method for manufacturing a surface using a charged particle beam lithographic process comprising a beam blur (βf), the method comprising:
determining a plurality of charged particle beam shots that will form a pattern on the surface by producing a charged particle dosage on the surface, wherein the formed pattern comprises a perimeter, and wherein the determining is performed using one or more computing hardware processors; reducing a sensitivity of the pattern to a variation in the βf; and forming the pattern on the surface with the plurality of shots.