发明名称 |
COMPOSITION FOR TUNGSTEN CMP |
摘要 |
A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate. |
申请公布号 |
US2015259573(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201414203647 |
申请日期 |
2014.03.11 |
申请人 |
Cabot Microelectronics Corporation |
发明人 |
GRUMBINE Steven;DYSARD Jeffrey;FU Lin;WARD William;WHITENER Glenn |
分类号 |
C09G1/02;H01L21/306 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
|
主权项 |
1. A chemical mechanical polishing composition comprising:
a water based liquid carrier; a colloidal silica abrasive dispersed in the liquid carrier, the colloidal silica abrasive having a permanent positive charge of at least 6 mV; and a polycationic amine compound in solution in the liquid carrier. |
地址 |
Aurora IL US |