SEMICONDUCTOR DEVICE

摘要

A semiconductor device according to an embodiment includes a first semiconductor layer including a first nitride semiconductor, a second semiconductor layer on the first semiconductor layer including a second nitride semiconductor, a source electrode, a drain electrode, a first gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode having a schottky junction, a second gate electrode provided above the second semiconductor layer intervening an insulating film, provided between the source electrode and the first gate electrode, electrically connected with the first gate electrode, and a third gate electrode provided above the second semiconductor layer intervening an insulating film, provided between the drain electrode and the first gate electrode, electrically connected with the first gate electrode. A first transistor structure has a first threshold value, a second transistor structure has a second threshold value, and a third transistor structure has a third threshold value.

主权项

1. A semiconductor device, comprising:
a first semiconductor layer including a first nitride semiconductor; a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer including a second nitride semiconductor having a band gap larger than the first nitride semiconductor; a source electrode provided above the second semiconductor layer; a drain electrode provided above the second semiconductor layer; a first gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode, the first gate electrode having a schottky junction with the second semiconductor layer; a second gate electrode provided above the second semiconductor layer intervening an insulating film, the second gate electrode provided between the source electrode and the first gate electrode, the second gate electrode electrically connected with the first gate electrode; and a third gate electrode provided above the second semiconductor layer intervening an insulating film, the third gate electrode provided between the drain electrode and the first gate electrode, the third gate electrode electrically connected with the first gate electrode, wherein, a first transistor structure has a first threshold value, a second transistor structure has a second threshold value, and a third transistor structure has a third threshold value.