IMAGING DEVICE

摘要

An imaging device is provided at a lower manufacturing cost. In a light-receiving portion of an imaging device which includes the light-receiving portion, a first transistor connected to the light-receiving portion, and a peripheral circuit, a comb-like n-type semiconductor and a comb-like p-type semiconductor are arranged so as to engage with each other in a plan view. Further, the light-receiving portion and the first transistor overlap with each other. The peripheral circuit includes a second transistor and a third transistor. Further, the second transistor and the third transistor include semiconductor layers having different bandgaps. Further, one of the semiconductor layers of the second transistor and the third transistor has the same bandgap as a semiconductor layer of the first transistor.

主权项

1. An imaging device comprising:
a light-receiving portion; a first transistor; and a first circuit; wherein the light-receiving portion is electrically connected to the first transistor, wherein the first transistor is electrically connected to the first circuit, wherein the light-receiving portion comprises a first region and a second region, wherein the first region and the second region each have a comb-like shape in a plan view, and wherein the first region and the second region are arranged so as to engage with each other.