发明名称 |
ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE |
摘要 |
The invention provides a method for manufacturing an array substrate which comprises a gate driving circuit including a plurality of thin film transistors and connection gate lines each connected between gates of two adjacent thin film transistors, the method comprises steps of: step S1, forming a pattern including the gates of the thin film transistors and the connection gate lines on a base; step S2, forming a gate insulation layer above the pattern including the gates of the thin film transistors and the connection gate lines; step S3, forming a pattern including a gate line protecting layer on the gate insulation layer, wherein the gate line protecting layer is above the connection gate lines; and step S4, forming a pattern including the sources and drains of the thin film transistors. The invention also provides an array substrate which is manufactured by above method, and a display device comprising the same. |
申请公布号 |
US2015263042(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201414498282 |
申请日期 |
2014.09.26 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. ;BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
XIE Zhenyu |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing an array substrate, wherein the array substrate comprises a gate driving circuit including a plurality of thin film transistors and connection gate lines each of which is connected between gates of two adjacent thin film transistors, the method comprises:
step S1, forming a pattern including gates of the thin film transistors and the connection gate lines on a base; step S2, forming a gate insulation layer above the pattern including the gates of the thin film transistors and the connection gate lines; step S3, forming a pattern including a gate line protecting layer on the gate insulation layer, wherein the gate line protecting layer is above the connection gate lines; and step S4, forming a pattern including the sources and drains of the thin film transistors. |
地址 |
Beijing CN |