发明名称 ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
摘要 The invention provides a method for manufacturing an array substrate which comprises a gate driving circuit including a plurality of thin film transistors and connection gate lines each connected between gates of two adjacent thin film transistors, the method comprises steps of: step S1, forming a pattern including the gates of the thin film transistors and the connection gate lines on a base; step S2, forming a gate insulation layer above the pattern including the gates of the thin film transistors and the connection gate lines; step S3, forming a pattern including a gate line protecting layer on the gate insulation layer, wherein the gate line protecting layer is above the connection gate lines; and step S4, forming a pattern including the sources and drains of the thin film transistors. The invention also provides an array substrate which is manufactured by above method, and a display device comprising the same.
申请公布号 US2015263042(A1) 申请公布日期 2015.09.17
申请号 US201414498282 申请日期 2014.09.26
申请人 BOE TECHNOLOGY GROUP CO., LTD. ;BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 XIE Zhenyu
分类号 H01L27/12 主分类号 H01L27/12
代理机构 代理人
主权项 1. A method for manufacturing an array substrate, wherein the array substrate comprises a gate driving circuit including a plurality of thin film transistors and connection gate lines each of which is connected between gates of two adjacent thin film transistors, the method comprises: step S1, forming a pattern including gates of the thin film transistors and the connection gate lines on a base; step S2, forming a gate insulation layer above the pattern including the gates of the thin film transistors and the connection gate lines; step S3, forming a pattern including a gate line protecting layer on the gate insulation layer, wherein the gate line protecting layer is above the connection gate lines; and step S4, forming a pattern including the sources and drains of the thin film transistors.
地址 Beijing CN