SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a first chip, a second chip stacked on the first chip, and a third chip stacked on the second chip. The second chip includes a second semiconductor layer having a second circuit surface facing the first wiring layer and a second rear surface opposite to the second circuit surface, a second wiring layer provided on the second circuit surface and connected to a first wiring layer of the first chip, and a second electrode extending through the second semiconductor layer and connected to the second wiring layer. The third chip includes a third semiconductor layer having a third circuit surface and a third rear surface facing the second chip, a third wiring layer provided on the third circuit surface, and a third electrode extending through the third semiconductor layer, connected to the third wiring layer and connected to the second electrode through bumps.

主权项

1. A semiconductor device comprising:
a first chip having a first semiconductor layer including a first circuit surface and a first rear surface opposite to the first circuit surface, a first wiring layer provided on the first circuit surface, and a first through electrode extending through the first semiconductor layer and connected to the first wiring layer; a second chip stacked on the first wiring layer side of the first chip and having a second semiconductor layer having a second circuit surface facing the first wiring layer and a second rear surface opposite to the second circuit surface, a second wiring layer provided on the second circuit surface and connected to the first wiring layer of the first chip, and a second through electrode extending through the second semiconductor layer and connected to the second wiring layer; and a third chip that is stacked on the second rear surface side of the second chip, and having a third semiconductor layer having a third circuit surface and a third rear surface positioned opposite to the third circuit surface and facing the second chip, a third wiring layer provided on the third circuit surface, and a third through electrode extending through the third semiconductor layer, connected to the third wiring layer and connected to the second electrode extending through the second chip through bumps formed therebetween.