| 发明名称 |
SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD |
| 摘要 |
A semiconductor device structure and a manufacturing method are provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive trace over the dielectric layer. The semiconductor device structure further includes a conductive feature over the conductive trace, and a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace. In addition, the semiconductor device structure includes a conductive bump over the conductive feature. |
| 申请公布号 |
US2015262955(A1) |
申请公布日期 |
2015.09.17 |
| 申请号 |
US201414208948 |
申请日期 |
2014.03.13 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
LEE Li-Guo;LIU Yung-Sheng;LIU Yi-Chen;LAI Yi-Jen;CHEN Chun-Jen;CHENG Hsi-Kuei |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device structure, comprising:
a semiconductor substrate; a dielectric layer over the semiconductor substrate; a conductive trace over the dielectric layer; a conductive feature over the conductive trace, wherein a width of the conductive feature is substantially equal to or larger than a maximum width of the conductive trace; and a conductive bump over the conductive feature. |
| 地址 |
Hsin-Chu TW |
