发明名称 |
SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS |
摘要 |
A substrate treatment method is performed by a substrate treatment apparatus including a substrate holding unit which holds a substrate, and a hot plate which heats the substrate from below. The method includes: a treatment liquid supplying step of locating the hot plate at a retracted position at which the hot plate is retracted below the substrate holding unit and, in this state, supplying a treatment liquid to an upper surface of the substrate held by the substrate holding unit; a protection liquid film forming step of forming a liquid film of a protection liquid to cover an upper surface of the hot plate in the treatment liquid supplying step; and a substrate heating step of heating the substrate by the hot plate with the hot plate being located adjacent to a lower surface of the substrate or in contact with the lower surface of the substrate. |
申请公布号 |
US2015258553(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201514659701 |
申请日期 |
2015.03.17 |
申请人 |
SCREEN Holdings Co., Ltd. |
发明人 |
KOBAYASHI Kenji;OKUTANI Manabu |
分类号 |
B05B1/24;B05B15/06;B05D1/02 |
主分类号 |
B05B1/24 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate treatment method to be performed by a substrate treatment apparatus including a substrate holding unit which holds a substrate, and a hot plate which heats the substrate from below, the substrate treatment method comprising:
a treatment liquid supplying step of locating the hot plate at a retracted position at which the hot plate is retracted below the substrate holding unit and, in this state, supplying a treatment liquid to an upper surface of the substrate held by the substrate holding unit; a protection liquid film forming step of forming a liquid film of a protection liquid on an upper surface of the hot plate to cover the upper surface of the hot plate in the treatment liquid supplying step; and a substrate heating step of heating the substrate by the hot plate with the hot plate being located adjacent to a lower surface of the substrate or in contact with the lower surface of the substrate. |
地址 |
Kyoto JP |