发明名称 SUBSTRATE CLEANING LIQUID FOR SEMICONDUCTOR DEVICES AND METHOD FOR CLEANING SUBSTRATE FOR SEMICONDUCTOR DEVICES
摘要 <p>PROBLEM TO BE SOLVED: To provide a cleaning liquid that is used in a cleaning step after CMP step on a substrate for semiconductor devices, especially a substrate for semiconductor devices which has, on its surface, metal wiring lines, having the satisfying property of preventing the corrosion of metal wiring line, and is arranged so that the generation of residues and the adhesion of residues to a substrate surface can be suppressed, and to provide a cleaning method.SOLUTION: A substrate cleaning liquid for semiconductor devices comprises (A) a compound expressed by the general formula (1) represented by histidine and a histidine derivative, (B) ascorbic acid, (C) gallic acid and (D) water, and has a pH of 8 or higher.</p>
申请公布号 JP2015165562(A) 申请公布日期 2015.09.17
申请号 JP20150021580 申请日期 2015.02.05
申请人 MITSUBISHI CHEMICALS CORP 发明人 HARADA KEN;SHIBATA TOSHIAKI;MIZUTANI BUNICHI
分类号 H01L21/304;C11D1/22;C11D1/28;C11D3/20;C11D3/26;C11D3/28;C11D7/08;C11D7/26;C11D7/32;C11D17/08 主分类号 H01L21/304
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