发明名称 |
REDUCED HEIGHT M1 METAL LINES FOR LOCAL ON-CHIP ROUTING |
摘要 |
Systems and methods are directed to an integrated circuit comprising a reduced height M1 metal line formed of an exemplary material with lower mean free path than Copper, for local routing of on-chip circuit elements of the integrated circuit, wherein the height of the reduced height M1 metal line is lower than a minimum allowed or allowable height of a conventional M1 metal line formed of Copper. The exemplary materials for forming the reduced height M1 metal line include Tungsten (W), Molybdenum (Mo), and Ruthenium (Ru), wherein these exemplary materials also exhibit lower capacitance and lower RC delays than Copper, while providing high electromigration reliability. |
申请公布号 |
WO2015138543(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
WO2015US19850 |
申请日期 |
2015.03.11 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
SONG, STANLEY SEUNGCHUL;YEAP, CHOH FEI;WANG, ZHONGZE;MOJUMDER, NILADRI;BADAROGLU, MUSTAFA |
分类号 |
H01L21/768;H01L23/528;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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