SEMICONDUCTOR DEVICE

摘要

A semiconductor device capable of reducing power consumption is provided. A writing potential is supplied to the cell 11 in which data rewriting is to be performed, whereby data is written. Meanwhile, in the cell 11 in which data rewriting is not to be performed, the data is transferred to the cell 12 and then the transferred data is rewritten to the cell 11. As a result, the data stored in the cell 11 in which data rewriting is not to be performed can be maintained without the reading and writing operation in a driver circuit. This results in a higher rewriting speed and lower power consumption in the driver circuit.

主权项

1. A semiconductor device comprising:
a cell array comprising:
a first cell comprising a first transistor, a second transistor, and a first capacitor; anda second cell comprising a third transistor, a fourth transistor, and a second capacitor; and a driver circuit; wherein the driver circuit is electrically connected to the first cell and the second cell, wherein a gate of the first transistor is electrically connected to a first wiring, wherein one of a source and a drain of the first transistor is electrically connected to a second wiring, wherein the other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor and one electrode of the first capacitor, wherein one of a source and a drain of the second transistor is electrically connected to the second wiring, wherein the other of the source and the drain of the second transistor is electrically connected to a third wiring, wherein the other electrode of the first capacitor is electrically connected to a fourth wiring, wherein a gate of the third transistor is electrically connected to a fifth wiring, wherein one of a source and a drain of the third transistor is electrically connected to a sixth wiring, wherein the other of the source and the drain of the third transistor is electrically connected to a gate of the fourth transistor and one electrode of the second capacitor, wherein one of a source and a drain of the fourth transistor is electrically connected to the sixth wiring, wherein the other of the source and the drain of the fourth transistor is electrically connected to the third wiring, wherein the other electrode of the second capacitor is electrically connected to a seventh wiring, wherein each of the first transistor and the third transistor includes an oxide semiconductor in a channel formation region, and wherein the sixth wiring has a function of transmitting a signal different from a signal supplied to the second wiring.