发明名称 SEMICONDUCTOR DRIVE APPARATUS
摘要 A semiconductor drive apparatus includes a first control unit configured, when an overcurrent is detected flowing between a first main electrode and a second main electrode of a switching element, to make a gate of the switching element conductive with a predetermined reference potential, to make a control voltage applied between the gate and the first main electrode lower, and to turn off the switching element; a detection unit configured to detect a current generated accompanying charge or discharge of a feedback capacitance between the gate and the second main electrode; and a second control unit configured, when the overcurrent and the current generated accompanying the charge or discharge of the feedback capacitance are detected, to make a resistance between the gate and the reference potential lower.
申请公布号 US2015263514(A1) 申请公布日期 2015.09.17
申请号 US201314417976 申请日期 2013.09.20
申请人 Koishi Ayuki;Osanai Yosuke 发明人 Koishi Ayuki;Osanai Yosuke
分类号 H02H9/02 主分类号 H02H9/02
代理机构 代理人
主权项 1. A semiconductor drive apparatus comprising: an overcurrent detection unit configured to detect an overcurrent flowing between a first main electrode and a second main electrode of a switching element; a first control unit configured, when the overcurrent is detected by the overcurrent detection unit, to make a gate of the switching element conductive with a predetermined reference potential, to make a control voltage applied between the gate and the first main electrode lower, and to turn off the switching element; a detection unit configured to detect a current generated accompanying charge or discharge of a feedback capacitance between the gate and the second main electrode; and a second control unit configured, when the overcurrent is detected by the overcurrent detection unit, and the current generated accompanying the charge or discharge of the feedback capacitance is detected by the detection unit, to make a resistance between the gate and the reference potential lower.
地址 Kani-shi JP