| 发明名称 |
HEATING ELEMENT FOR HYBRID SILICON/III-V COMPOUND SEMICONDUCTOR DEVICES |
| 摘要 |
A hybrid silicon/III-V compound semiconductor laser device comprising a silicon substrate including a channel configured for silicide line formation as a function of current through the channel; so that the temperature of the laser device is adjusted to a predetermined level. |
| 申请公布号 |
US2015263484(A1) |
申请公布日期 |
2015.09.17 |
| 申请号 |
US201414281632 |
申请日期 |
2014.05.19 |
| 申请人 |
Emcore Corporation |
发明人 |
Huang Jia-Sheng |
| 分类号 |
H01S5/024;H01S5/30;H01S5/02 |
主分类号 |
H01S5/024 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of adjusting an operational parameter in a III-V compound semiconductor device comprising:
providing a silicon substrate including a channel configured for silicide line formation as a function of current through the channel; coupling the silicon substrate to the III-V compound semiconductor device so that the temperature of the silicon substrate is radiated to the III-V compound semiconductor device: and controlling the current through the channel so that the temperature of the semiconductor device is adjusted to a predetermined level, thereby controllably adjusting the operational parameter of the semiconductor device. |
| 地址 |
Albuquerque NM US |
