SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, an insulating region, and a third semiconductor region. The first semiconductor region is of a first conductivity type. The first semiconductor region is provided between the first electrode and the second electrode, and contacts the first electrode. The second semiconductor region is of a second conductivity type. The second conductor region is provided between the first semiconductor region and the second electrode. The insulating region extends from the second electrode to a side of the first semiconductor region. The third semiconductor region is of the first conductivity type. The third semiconductor region is provided in at least a portion of a region between the second semiconductor region and the insulating region, and contacts the first semiconductor region.

主权项

1. A semiconductor device, comprising:
a first electrode; a second electrode; a first semiconductor region of a first conductivity type provided between the first electrode and the second electrode, the first semiconductor region contacting the first electrode; a second semiconductor region of a second conductivity type provided between the first semiconductor region and the second electrode; an insulating region extending from the second electrode to a side of the first semiconductor region; and a third semiconductor region of the first conductivity type provided in at least a portion of a region between the second semiconductor region and the insulating region, the third semiconductor region contacting the first semiconductor region.