发明名称 FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM
摘要 A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations.
申请公布号 US2015259796(A1) 申请公布日期 2015.09.17
申请号 US201514657524 申请日期 2015.03.13
申请人 TOKYO ELECTRON LIMITED 发明人 SUZUKI Keisuke;MURAKAMI Hiroki;HISHIYA Shingo;KADONAGA Kentaro;OBATA Minoru
分类号 C23C16/455;C23C16/24;C23C16/458;C23C16/26;C23C16/44;C23C16/52 主分类号 C23C16/455
代理机构 代理人
主权项 1. A method of forming a thin film containing a doping element in a vacuum atmosphere, comprising: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations, wherein the repeating includes supplying a backflow prevention gas into the processing vessel through the source gas supply unit, the doping gas supply unit and the reaction gas supply unit.
地址 Tokyo JP