发明名称 |
FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM |
摘要 |
A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations. |
申请公布号 |
US2015259796(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201514657524 |
申请日期 |
2015.03.13 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SUZUKI Keisuke;MURAKAMI Hiroki;HISHIYA Shingo;KADONAGA Kentaro;OBATA Minoru |
分类号 |
C23C16/455;C23C16/24;C23C16/458;C23C16/26;C23C16/44;C23C16/52 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a thin film containing a doping element in a vacuum atmosphere, comprising:
supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations, wherein the repeating includes supplying a backflow prevention gas into the processing vessel through the source gas supply unit, the doping gas supply unit and the reaction gas supply unit. |
地址 |
Tokyo JP |