SUBSTRATE PROCESSING APPARATUS

摘要

There is provided a substrate processing apparatus, including a processing chamber configured to house a substrate, a first source supply system configured to supply a chlorosilane-based source to the substrate in the processing chamber, a second source supply system configured to supply an aminosilane-based source to the substrate in the processing chamber and a reactive gas supply system configured to supply a reactive gas different from each of the sources, to the substrate in the processing chamber. The substrate processing apparatus further includes a controller configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that a process of forming an insulating film on the substrate is performed by an alternating process.

主权项

1. A substrate processing apparatus comprising:
a processing chamber configured to house a substrate; a first source supply system configured to supply a chlorosilane-based source to the substrate in the processing chamber; a second source supply system configured to supply an aminosilane-based source to the substrate in the processing chamber; a reactive gas supply system configured to supply a reactive gas different from each of the sources, to the substrate in the processing chamber; and a controller configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that a process of forming an insulating film on the substrate is performed by alternately performing the following processes one or more times: the process of supplying one of the sources of the chlorosilane-based source or the aminosilane-based source to the substrate in the processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon, and the process of supplying the reactive gas to the substrate, to modify the first layer and form a second layer.