| 摘要 |
[Problem] To provide an etching method that can suppress nonuniformity and the generation of defects in the pattern shape when etching, and that makes it possible to carry out processing at high throughput. [Solution] When a mask pattern (55) provided to a dielectric substrate (50) comprises a pattern region (B) having a plurality of minute openings and non-pattern regions (A) other than the pattern region, and in a case where a dielectric substrate is mounted at a prescribed position on a substrate mounting structure unit (110), the configuration of the substrate mounting structure unit (110) is set so that the average dielectric constant between a surface (50b) of the dielectric substrate (50) for the pattern region (B) and a surface (112b) of a prescribed electrode (112) of the substrate mounting structure unit (110) is larger than the average dielectric constant for the non-pattern region (A), the dielectric substrate (50) is mounted at the prescribed position on the substrate mounting structure unit (110), and under an atmosphere in which pressure is reduced so as to be lower than atmospheric pressure, plasma is generated and the dielectric substrate (50) is etched. |
