| 摘要 |
[Problem] To provide a magnetoresistive element that exhibits a low saturation magnetization, a high degree of perpendicular magnetic anisotropy, and a high magnetoresistance ratio. Also, to provide a magnetic memory. [Solution] A magnetoresistive element in an embodiment has the following: a first magnetic layer; a second magnetic layer; a first non-magnetic layer provided between the first magnetic layer and the second magnetic layer; a third magnetic layer provided between the first magnetic layer and the first non-magnetic layer; and a layer that is provided between the first magnetic layer and the third magnetic layer, contains two or more elements that the first magnetic layer also contains, and has an amorphous structure. |
