| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for exposing a desired pattern on a target by means of a blanking aperture array in a particle-optical lithography apparatus which has a finite number of defects.SOLUTION: A nominal exposure pattern is calculated as a raster graphics over image elements disregarding defective blanking apertures, from a desired pattern. Compromised image elements 1105 are determined which are exposed by aperture images of defective blanking apertures. For each compromised element 1105, a set of neighboring image elements is selected as correction elements 1104. For each compromised element, corrected dose values are calculated for the correction elements, the corrected dose values minimizing an error function of the deviation of a dose distribution including defects from the nominal dose distribution, under the constraint that each of the corrected dose values falls within allowed doses. A corrected exposure pattern 1103 is generated by substituting the corrected dose values for the nominal dose values at the correction elements. |
