| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a technology which inhibits a short circuit caused by a residual metal.SOLUTION: A semiconductor device 1 includes: a semiconductor substrate 10 on which an IGBT is formed; a gate electrode 20 of the IGBT which is formed on the semiconductor substrate 10; an insulation film 50 which covers the gate electrode 20 and the semiconductor substrate 10 from above; and an emitter electrode 30 formed on the insulation film 50. The semiconductor device 1 includes gate wiring 40 which is formed on the insulation film 50, separated from the emitter electrode 30, and contacts with the gate electrode 20. A first step part 54 is formed on an area of an upper surface of the insulation film 50 which is located between a portion located on the gate electrode 20 and a portion located on the semiconductor substrate 10. The emitter electrode 30 covers the first step part 54 and the gate wiring 40 does not cover the first step part 54.</p> |
