METHOD OF FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT HAVING PHASE-CHANGE LAYER

摘要

A method of fabricating a semiconductor integrated circuit that includes forming a lower electrode in a semiconductor substrate, forming an interlayer insulating layer including a phase-change region exposing the lower electrode on the semiconductor substrate, forming a first phase-change layer having a crystalline state along surfaces of the Interlayer insulating layer and an exposed lower electrode, and growing a second phase-change layer on the first phase-change layer based on the crystallinity of the first phase-change layer to be filled in the phase-change region.

主权项

1. A method of fabricating a semiconductor integrated circuit, the method comprising:
forming a first phase-change layer having a crystalline state; and growing a second phase-change layer on the first phase-change layer based on crystallinity of the first phase-change layer.