发明名称 |
DEVICES HAVING NITRIDE QUANTUM DOT AND METHODS OF MANUFACTURING THE SAME |
摘要 |
Devices having nitride quantum dots and methods of manufacturing the same are provided. The device includes a nitride group material substrate, a plurality of nanorods that are formed on the nitride group material layer and are separated from each other, and a nitride quantum dot on each of the nanorods. A pyramid-shaped layer may be further formed between each of the nanorods and the nitride quantum dot. The nanorods and the nitride quantum dot are covered by an upper contact layer. A plurality of nitride quantum dots may be formed on each of the nanorods and the respective nitride quantum dots may have different sizes. |
申请公布号 |
US2015263225(A1) |
申请公布日期 |
2015.09.17 |
申请号 |
US201414492594 |
申请日期 |
2014.09.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. ;KOREA PHOTONICS TECHNOLOGY INSTITUTE |
发明人 |
LEE Jae-soong;SONG Young-ho;JEON Seong-ran;KIM Seung-hwan |
分类号 |
H01L33/06;H01L33/50;H01L33/32;H01L33/24;H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
a nitride group material substrate; a plurality of nanorods that are disposed on the nitride group material substrate and are separated from each other; and a plurality of nitride quantum dots disposed on the nanorods. |
地址 |
Suwon-si KR |