METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conductive film is formed over the buffer film to which oxygen is added, and an impurity element is added to the oxide semiconductor film using the conductive film as a mask. An insulating film containing hydrogen and overlapping with the oxide semiconductor film may be formed after the impurity element is added to the oxide semiconductor film.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming an insulating film over an oxide semiconductor film; forming a buffer film over the insulating film; adding oxygen to the buffer film and the insulating film; forming a conductive film over the buffer film to which oxygen is added; and adding an impurity element to the oxide semiconductor film using the conductive film as a mask.