MEMORY DEVICE AND METHOD PROGRAMMING/READING MEMORY DEVICE

摘要

A method of programming a memory device includes generating a row selection signal according to a command type of a command received from a memory controller, loading data to page buffers corresponding to bit lines assigned by the column selection signal, and programming memory cells connected to a word line assigned by the row selection signal based on the data loaded to the page buffers. The column selection signal being generated to selectively jump a portion of the page buffers corresponding to the bit lines according to the command type.

主权项

1. A method of programming a memory device, the method comprising:
generating a row selection signal corresponding to a row address and a column selection signal corresponding to a column address in a memory cell array portion based on a command type received by the memory device; loading data into page buffers corresponding to bit lines assigned by the column selection signal; and programming memory cells connected to a word line assigned by the row selection signal based on the data loaded into the page buffers, wherein the column selection signal is generated to selectively jump a portion of the page buffers according to the command type.